triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 28, 2003 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -30 -25 -20 -15 -10 -5 0 5 10 15 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) small signal (db) 60ghz low noise amplifier TGA4600-EPU key features ? typical frequency range: 57 - 65 ghz ? 4 db nominal noise figure ? 13 db nominal gain ? bias 3.0 v, 41 ma ? 0.15 um 3mi phemt technology ? chip dimensions 1.62 x 0.84 x 0.10 mm (0.064 x 0.033 x 0.004 in) primary applications ? wireless lan ? point-to-point radio rf probe data bias conditions: vd = 3.0 v, id =41 ma irl orl gain 0 1 2 3 4 5 6 7 8 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) noise figure (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 28, 2003 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table i maximum ratings 1/ symbol parameter value notes vd drain voltage 5 v 2/ vg gate voltage range -1 to +0.5 v id drain current 200 ma 2/ 3 / ? ig ? gate current 5 ma 3/ p in input continuous wave power 15 dbm p d power dissipation 0.39w 2/ 4 / t ch operating channel temperature 150 0 c5/ 6 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ total current for the entire mmic. 4/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is 1.0e+6 hrs. 5/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet. TGA4600-EPU table ii dc probe tests (ta = 25 0 c, nominal) symbol parameter min. typ. max. units v bvgd , q1-q3 breakdown voltage gate-source -30 -5 v v bvgs, q3 breakdown voltage gate-source -30 -5 v v p, q1,2,3 pinch-off voltage -1.0 -0.1 v q1 is 100 um fet, q2 is 100 um fet, q3 is 210 um fet.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 28, 2003 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table iii electrical characteristics (ta = 25 0 c nominal) TGA4600-EPU parameter typical units frequency range 57 - 65 ghz drain voltage, vd 3.0 v drain current, id 41 ma gate voltage, vg -0.5 - 0 v small signal gain, s21 13 db input return loss, s11 20 db output return loss, s22 6 db noise figure, nf 4 db table iv thermal information parameter test conditions t ch ( o c) r q jc ( c/w) t m (hrs) r q jc thermal resistance (channel to case) vd = 3 v id = 41 ma pdiss = 0.12 w 80 83 1.2 e+9 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 o c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 28, 2003 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 5 6 7 8 9 10 11 12 13 14 15 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) gain (db) TGA4600-EPU rf probe data bias conditions: vd = 3.0 v, id = 41 ma 0 1 2 3 4 5 6 7 8 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) noise figure (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 28, 2003 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA4600-EPU rf probe data bias conditions: vd = 3.0 v, id = 41 ma -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) input return loss (db) -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 28, 2003 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice mechanical drawing TGA4600-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 28, 2003 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice recommended chip assembly diagram TGA4600-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. 3 mil ribbon 3 mil ribbon ribbons as short as possible
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information october 28, 2003 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4600-EPU reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 200 0 c.
|
